triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 22, 2004 1 77 ghz transceiver switch key features ? i/o compatible with ma4gc6772 ? 3 antenna ports ? receive, source, and lo ports ? 2.5 db rx/tx insertion loss typical ? 40 db source/mixer isolation typical ? 25 db ant/ant isolation typical ? bias supply: 1.3v@40ma ? die size: 1.70 x 2.16 x 0.1 mm primary applications ? automotive radar ? instrumentation note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice TGS4307-EPU product description the tgs4307 is a 77 ghz switch matrix for use in automotive radar transceivers. the switch is designed using triquints proven vpin diode production process. three antenna ports may be selected independently and directed to a source (j5) or a receive (j4) port. additionally, the source port can be directed to the lo port for use with a downconverting mixer. measured fixtured data bias: 1.3v @ 40ma radar application schematic -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 70 71 72 73 74 75 76 77 78 79 80 frequency (ghz) insertion loss (db) receive path transmit path lo path -80 -70 -60 -50 -40 -30 -20 -10 0 70 71 72 73 74 75 76 77 78 79 80 frequency (ghz) isolation (db) ant / ant source / ant source / lo source / rx j1 tgs4307 j3 j2 j6 if j5 j4 rx port source port lo port b1 b3 b2 b4 b5 b4
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 22, 2004 2 table i maximum ratings 1/ symbol parameter value notes v + positive supply voltage 2 v 2/ v - negative supply voltage -8 v 2/ i + positive supply current (quiescent) 80 ma 2/, 3/ p in input continuous wave power tbd p d power dissipation 160 mw 2/ t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings represent the maximum operable values for this device. 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ control line b1, b2, b3 maximum current = 20 ma control line b4, b5 maximum current = 40 ma TGS4307-EPU note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice parameter typical units frequency range 75 - 80 ghz bias supply 1.3v @ 40ma insertion loss, port j3 to j4 (rx) 2.5 db insertion loss, port j1 to j5 (tx) 2.5 db insertion loss source to lo, port j5 to j6 (rx) 1.8 db isolation source to rx, port j4 to j5 (rx) >40 db isolation source to antenna, port j1 to j5 (rx) >40 db isolation antenna to antenna, port j1 to j3 (rx,tx) 25 db isolation source to lo, port j5 to j6 (tx) 20 db return loss >8 db table ii electrical characteristics (ta = 25 0 c nominal)
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 22, 2004 3 TGS4307-EPU preliminary measured data bias: 1.3v @ 40ma note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 65 67 69 71 73 75 77 79 81 83 85 87 89 91 frequency (ghz) insertion loss (db) receive path transmit path lo path -80 -70 -60 -50 -40 -30 -20 -10 0 65 67 69 71 73 75 77 79 81 83 85 87 89 91 frequency (ghz) isolation (db) ant / ant source / ant source / lo source / rx ant/ant source/lo source/rx source/ant lo path receive path transmit path
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 22, 2004 4 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice preliminary measured data -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 65 67 69 71 73 75 77 79 81 83 85 87 89 91 frequency (ghz) return loss (db) rl @ rx port rl @ antenna port antenna 3 to rx port -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 65 67 69 71 73 75 77 79 81 83 85 87 89 91 frequency (ghz) return loss (db) rl @ antenna port rl @ source port source port to antenna 1 TGS4307-EPU
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 22, 2004 5 TGS4307-EPU preliminary measured data source port to lo port -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 65 67 69 71 73 75 77 79 81 83 85 87 89 91 frequency (ghz) return loss (db) rl @ lo port rl @ source port note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 22, 2004 6 mechanical drawing gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice TGS4307-EPU 1 2 3 4 5 6 7 8 9 10 11 0 0 0.103 (0.004) 0.341 (0.013) 0.717 (0.028) 1.657 (0.065) 1.760 (0.069) 0.103 (0.004) 0.335 (0.013) 0.775 (0.031) 1.274 (0.050) 1.873 (0.074) 2.038 (0.080) 1.638 (0.064) 1.230 (0.048) 0.880 (0.035) 0.123 (0.005) 2.160 (0.085) 2.058 (0.081) 1.870 (0.074) 1.274 (0.050) 0.463 (0.018) 0.123 (0.005) units: millimeters (inches) thickness: 0.1016 (0.004) chip edge to bond pad dimensions are shown to center of bond pads chip size tolerance: +/- 0.05 (0.002) gnd is backside of mmic bond pad # 1 (antenna port 1) bond pad # 2 (vb1) bond pad # 3 (antenna port 2) bond pad # 4 (vb2) bond pad # 5 (vb3) bond pad # 6 (antenna port 3) bond pad # 7 (vb5) bond pad # 8 (source port) bond pad # 9 (lo port) bond pad # 10 (vb4) bond pad # 11 (receiver port) 0.100 x 0.100 (0.004 x 0.004) 0.140 x 0.100 (0.006 x 0.004) 0.100 x 0.100 (0.004 x 0.004) 0.100 x 0.140 (0.004 x 0.006) 0.140 x 0.100 (0.006 x 0.004) 0.100 x 0.100 (0.004 x 0.004) 0.140 x 0.100 (0.006 x 0.004) 0.100 x 0.100 (0.004 x 0.004) 0.100 x 0.100 (0.004 x 0.004) 0.100 x 0.140 (0.004 x 0.006) 0.100 x 0.100 (0.004 x 0.004)
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 22, 2004 7 TGS4307-EPU assembly drawing gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice b1 b2 b3 b4 b5 note: unused ports should be terminated with 50 . substrate: gaas r =12.9 thickness=4mil note: ribbon bond is acceptable (instead of 3 bondwires) recommended interconnect scheme substrate: alumina r =9.8 thickness=5mil external interface (tfn) switch mmic microstrip trace width=120mm (50 ) 3 bondwires gap ~4mil diameter=0.7mil height< 1mil 5mil 3mil rf i/o pad tfn
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 22, 2004 8 function selected antenna (b1, b2, or b3) unused antennas (b1, b2, or b3) b4 b5 transmit -5 to 0v +10ma each +20ma 0v receive -5 to 0v +10ma each 0v +20ma bias state table forward voltage is ~ +1.3v to achieve bias current application schematic TGS4307-EPU note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. j1 tgs4307 j3 j2 j6 if j5 j4 rx port source port lo port b1 b3 b2 b4 b5 b4
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 22, 2004 9 assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGS4307-EPU note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 0 c (30 seconds max). an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: wedge bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. maximum stage temperature is 200 0 c.
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